absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 12 * i d @ v gs = 12v, t c = 100c continuous drain current 10 i dm pulsed drain current ? 48 p d @ t c = 25c max. power dissipation 25 w linear derating factor 0.2 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 520 mj i ar avalanche current ? 12 a e ar repetitive avalanche energy ? 2.5 mj dv/dt p eak diode recovery dv/dt ? 3.0 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 ( 0.063 in./1.6mm from case for 10s) weight 0.98 (typical) g pre-irradiation international rectifier?s r5 tm technology provides high performance power mosfets for space appli- cations. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paral- leling and temperature stability of electrical param- eters. o c a radiation hardened IRHF57Z30 power mosfet thru-hole (to-39) 07/22/02 www.irf.com 1 30v, n-channel technology product summary part number radiation level r ds(on) i d IRHF57Z30 100k rads (si) 0.045 ? 12a* irhf53z30 300k rads (si) 0.045 ? 12a* irhf54z30 600k rads (si) 0.045 ? 12a* irhf58z30 1000k rads (si) 0.056 ? 12a* features: single event effect (see) hardened ultra low r ds(on) neutron tolerant identical pre and post electrical test conditions repetitive avalanche ratings dynamic dv/dt ratings simple drive requirements ease of paralleling hermetically sealed electrically isolated for footnotes refer to the last page to-39 * current is limited by internal wire diameter pd - 93793b
IRHF57Z30 pre-irradiation 2 www.irf.com thermal resistance parameter min typ max units test conditions r thjc junction-to-case ? ? 5.0 r thja junction-to-ambient ? ? 175 typical socket mount c/w note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) ? ? 12* i sm pulse source current (body diode) ? ?? 48 v sd diode forward voltage ? ? 1.5 v t j = 25c, i s = 12a, v gs = 0v ? t rr reverse recovery time ? ? 92 ns t j = 25c, i f = 12a, di/dt 100a/ s q rr reverse recovery charge ? ? 194 nc v dd 25v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a * current is limited by internal wire diameter electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 30 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.03 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.045 ? v gs = 12v, i d = 10a resistance v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 12 ? ? s ( )v ds > 15v, i ds = 10a ? i dss zero gate voltage drain current ? ? 10 v ds = 24v ,v gs =0v ??25 v ds = 24v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 65 v gs =12v, i d = 12a q gs gate-to-source charge ? ? 20 nc v ds = 15v q gd gate-to-drain (?miller?) charge ? ? 10 t d (on) turn-on delay time ? ? 25 v dd = 15v, i d = 12a t r rise time ? ? 100 v gs =12v, r g = 7.5 ? t d (off) turn-off delay time ? ? 35 t f fall time ? ? 30 l s + l d total inductance ? 7.0 ? measured from drain lead (6mm /0.25in. from package) to source lead (6mm /0.25in. from package) with source wires internally bonded from source pin to drain pad c iss input capacitance ? 2055 ? v gs = 0v, v ds = 25v c oss output capacitance ? 936 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 35 ? na ? ? nh ns a
www.irf.com 3 pre-irradiation IRHF57Z30 table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? parameter up to 600k rads(si) 1 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 30 ? 30 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.5 4.0 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 ? -100 v gs = -20 v i dss zero gate voltage drain current ? 10 ? 25 a v ds = 24v, v gs =0v r ds(on) static drain-to-source ? ? 0.024 ? 0.03 ? v gs =12v, i d =10a on-state resistance (to-3) r ds(on) static drain-to-source ? ? 0.045 ? 0.056 ? v gs =12v, i d =10a on-state resistance (to-39) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part numbers IRHF57Z30, irhf53z30 and irhf54z30 2. part number irhf58z30 fig a. single event effect, safe operating area v sd diode forward voltage ? ? 1.5 ? 1.5 v v gs = 0v, i s =12a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. table 2. single event effect safe operating area for footnotes refer to the last page ion let energy range v ds (v) (mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =-5v @v gs =-10v @v gs =-15v @v gs =-20v br 37.9 255 33.4 30 30 30 25 20 i 59.4 290 28.8 25 25 20 15 10 au 80.3 313 26.5 22.5 22.5 15 10 ? 0 5 10 15 20 25 30 35 0 -5 -10 -15 -20 vgs vds br i au au
IRHF57Z30 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 1 10 100 1000 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 1000 5 7 9 11 13 15 v = 15v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 12a 1 10 100 1000 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v
www.irf.com 5 pre-irradiation IRHF57Z30 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 500 1000 1500 2000 2500 3000 3500 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c rss c oss c iss 0 10 20 30 40 50 60 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 12a v = 15v ds v = 24v ds 0.1 1 10 100 0.4 0.8 1.2 1.6 2.0 2.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 1 10 100 v ds , drain-tosource voltage (v) 1 10 100 i d , drain-to-source current (a) tc = 25c tj = 150c single pulse 1ms 1 0ms operation in this area limited by r ds (on) 100s
IRHF57Z30 pre-irradiation 6 www.irf.com fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0 5 10 15 20 25 t , case temperature ( c) i , drain current (a) c d limited by package 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) v gs
www.irf.com 7 pre-irradiation IRHF57Z30 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 12 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 250 500 750 1000 1250 1500 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 5.4a 9.6a 12a . v gs
IRHF57Z30 pre-irradiation 8 www.irf.com ? pulse width 300 s; duty cycle 2% ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. 24 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd = 20v, starting t j = 25c, l= 7.2 mh peak i l = 12a, v gs = 12v ? i sd 12a, di/dt 135a/ s, v dd 30v, t j 150c case outline and dimensions ? to-205af (modified to-39) footnotes: legend 1- source 2- gate 3- drain ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 07/02
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